D2081UK Datasheet, PDF (2/3 Pages) Seme LAB – METAL GATE RF SILICON FET

D2081UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
|_D = 10mA
65
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage*
g_fs
Forward Transconductance*
G_PS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 750mW
V_DS = 12V
f = 1GHz
V_DS = 0
V_DS = V_GS
I_D = 0.2A
I_DQ = 75mA
1
0.18
11
40
10:1
C_iss Input Capacitance
V_DS = 0V V_GS = –5V f = 1MHz
C_oss Output Capacitance
V_DS = 28V V_GS = 0 f = 1MHz
C_rss Reverse Transfer Capacitance V_DS = 28V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Typ.
Max. Unit
V
1
mA
1
µA
7
V
mhos
dB
%
—
12
6
pF
0.5
Max. 70°C / W
Freq
MHz
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S Parameters at V_d = 12V, I_d = 75mA
S11
S12
S21
mag ang mag ang mag ang
0.47
-95 0.04
50 5.20
90
0.46 -120 0.05
80 4.40
76
0.47 -131 0.07
100 3.50
68
0.49 -146 0.10
110 3.00
59
0.51 -156 0.15
110 2.60
51
0.53 -163 0.20
104 2.30
45
0.54 -180 0.25
100 2.10
40
0.55 178 0.29
96 1.80
36
0.56 175 0.34
91 1.60
33
0.57 163 0.40
85 1.40
28
0.58 150 0.45
80 1.30
26
0.60 144 0.48
75 1.20
24
0.60 140 0.52
70 1.10
22
0.59 130 0.55
66 1.00
21
0.58 123 0.58
63 0.95
20
0.56 115 0.60
58 0.90
19
0.54 110 0.62
54 0.90
20
0.51 108 0.62
50 0.90
20
S22
mag ang
0.32
-90
0.35
-91
0.38
-94
0.43
-98
0.48 -103
0.54 -108
0.58 -112
0.60 -116
0.63 -120
0.65 -126
0.66 -129
0.66 -133
0.66 -135
0.65 -138
0.65 -140
0.64 -142
0.64 -144
0.63 -145
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 5/96