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D2081UK Datasheet, PDF (1/3 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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TetraFET
D2081UK
MECHANICAL DATA
Dimensions in mm.
0 .3 2
0 .2 4
16Ë
m ax.
0 .1 0
0 .0 2
13Ë
1 .7 0
m ax.
10Ë
m ax.
6 .7
6 .3
3 .1
2 .9
4
3 .7 7 .3
3 .3 6 .7
1
2
3
1 .0 5
0 .8 5
PIN 1
PIN 3
GATE
SOURCE
2 .3 0
4 .6 0
0 .8 0
0 .6 0
SOTâ223
PIN 2
PIN 4
DRAIN
DRAIN
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW â 12V â 1GHz
SINGLE ENDED
FEATURES
⢠SIMPLIFIED AMPLIFIER DESIGN
⢠SUITABLE FOR BROAD BAND APPLICATIONS
⢠LOW Crss
⢠SIMPLE BIAS CIRCUITS
⢠LOW NOISE (Typical < 2dB NF)
⢠HIGH GAIN â 11dB MINIMUM
⢠SURFACE MOUNT
APPLICATIONS
⢠VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
2W
BVDSS
Drain â Source Breakdown Voltage
65V
BVGSS
Gate â Source Breakdown Voltage
±20V
ID(sat)
Drain Current
200mA
Tstg
Storage Temperature
â65 to 125°C
Tj
Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
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