D1082UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

SEME
LAB
D1082UK
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise stated)
Parameter
Test Conditions
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 10mA
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage*
g_fs
Forward Transconductance*
G_PS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
V_DS = 28V
P_O = 4W
V_DS = 0
V_DS = V_GS
I_D = 1A
I_DQ = 0.1A
f = 200MHz
C_iss Input Capacitance
V_DS = 0V V_GS = –5V f = 1MHz
C_oss Output Capacitance
V_DS = 28V V_GS = 0 f = 1MHz
C_rss Reverse Transfer Capacitance V_DS = 28V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Min.
70
1
0.8
13
40
20:1
Typ.
Max. Unit
V
1
mA
1
µA
7
V
S
dB
%
—
60
30
pF
2.5
Max. 2°C / W
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