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D1082UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
0.64
(0.025)
6.35
(0.250)
5.33
(0.210)
0.89
(0.035)
2 pls.
4
123
2.29
(0.090)
0.51
(0.020)
REF.
7Ë
± 1Ë
7Ë
± 1Ë
7Ë
± 1Ë
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
0.51
(0.020)
REF.
1.02
(0.040)
TOâ251 PACKAGE
PIN 1 â GATE
PIN 2 â DRAIN
PIN 3 â SOURCE
PIN 4 â DRAIN
TetraFET
D1082UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W â 28V â 200MHz
SINGLE ENDED
FEATURES
⢠SIMPLIFIED AMPLIFIER DESIGN
⢠SUITABLE FOR BROAD BAND
APPLICATIONS
⢠LOW Crss
⢠SIMPLE BIAS CIRCUITS
⢠LOW NOISE
⢠HIGH GAIN â 13dB MINIMUM
⢠SURFACE MOUNT
APPLICATIONS
⢠LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD
Power Dissipation
62.5W
BVDSS
Drain â Source Breakdown Voltage
70V
BVGSS
Gate â Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
TSTG
Storage Temperature
â65 to 125°C
TJ
Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
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