D1006UK Datasheet, PDF (2/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1006UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 100mA
70
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS = 20V
V_DS = 0
V_GS(th) Gate Threshold Voltage*
I_D = 10mA
V_DS = V_GS
1
g_fs
Forward Transconductance*
V_DS = 10V
I_D = 6A
4.8
G_PS Common Source Power Gain
P_O = 120W
14
h
Drain Efficiency
V_DS = 28V
I_DQ = 1.2A
50
VSWR Load Mismatch Tolerance
f = 175MHz
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0V
V_DS = 28V
V_DS = 28V
V_GS = –5V f = 1MHz
V_GS = 0 f = 1MHz
V_GS = 0 f = 1MHz
Typ.
Max. Unit
V
6
mA
1
mA
7
V
S
dB
%
—
360 pF
180 pF
15
pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 0.8°C / W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 11/00