D1006UK Datasheet, PDF (1/4 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1006UK
MECHANICAL DATA
B
C
A
E
1
2
3
FG
6
5
4
J
D
H
M
QN
PIN 1
PIN 3
PIN 5
SOURCE
SOURCE
GATE
DIM mm
A
9.09
B
19.3
C
45°
D
5.71
E 1.65R
F
9.78
G 20.32
H 19.30
J 1.52R
K 10.77
M 22.86
N
3.17
O
0.13
P
4.19
Q
6.35
K
OP
DV
PIN 2
PIN 4
PIN 6
DRAIN
SOURCE
SOURCE
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 14 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
220W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
30A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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Prelim. 11/00