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BFX34 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor
BFX34
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICES
Collector Cut-off Current
VCE = 60V VBE = 0
IEBO
Emitter Cut-off Current
VEB = 4V
IC = 0
V(BR)CBO* Collector – Base Breakdown Voltage IC = 5mA
IE = 0
120
VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 100mA IB = 0
60
VEBO*
Emitter– Base Voltage
IE = 1mA
IC = 0
6
VCE(sat)* Collector – Emitter Saturation Voltage IC = 5A
IB = 0.5A
VBE(sat)* Base – Emitter Saturation Voltage
IC = 5A
IB = 0.5A
IC = 1A
VCE = 2V
hFE*
DC Current Gain
IC = 1.5A
VCE = 0.6V
IC = 2A
VCE = 2V
40
fT*
Transition Frequency
IC = 0.5A
VCE = 5V
70
f = 20MHz
CEBO
Emitter – Base Capacitance
IC = 0
f = 1MHz
VEB = 0.5V
CCBO
Collector – Base Capacitance
VCB = 10V
f = 1MHz
IE = 0
ton
Turn on Time
toff
Turn off Time
VCC = 20V IC = 0.5A
IB1 = – IB2= 0.5A
* Pulse Duration = 300µs,duty cycle ≤ 2%.
Typ.
0.02
0.05
0.4
1.3
100
75
80
100
300
40
Max. Unit
10
µA
10
V
1
1.6
−
150
MHz
500
pF
100
0.6
µs
1.2
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
35 °C/W
200 °C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 5569
Issue 1