BFX34 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

BFX34
MECHANICAL DATA
Dimensions in mm (inches)
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
DESCRIPTION:
The BFX34 is a silicon Epitaxial Planar NPN
transistor in a TO-39 case, intended for high
current applications.
Very low saturation voltage and high speed
at high current levels make it ideal for power
drivers, power amplifiers, switching power
supplies and relay drive inverters.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO39 (TO-205AD) Package
FEATURES
• SILICON EPITAXIAL NPN TRANSISTOR
• HIGH SPEED, LOW SATURATION SWITCH
• CECC SCREENING OPTIONS
PIN1 – EMITTER
Underside View
PIN 2 – BASE PIN 3 – COLLECTOR
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (I_E = 0)
120V
V_CEO
Collector – Emitter Voltage (I_B = 0)
60V
V_EBO
Emitter – Base Voltage (I_C = 0)
6V
I_C
Continious Collector Current
2A
I_CM
Peak Repetitive Collector Current
5A
I_B
Continious Base Current
1A
P_tot
Total Device Dissipation @ T_A ≤ 25°C
0.87W
@ T_C ≤ 25°C
5W
T_STG
Storage Temperature Range
–65 to +200°C
T_J
Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5569
Issue 1