BFX29_03 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX29
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
I_EBO
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
C_tc
C_te
f_T
Parameter
Emitter Cut–off Current
Collector Cut–off Current
DC Current Gain
Collector – Emitter
Saturation Voltage
Test Conditions
V_EB = 5.0V
I_C = 0
V_EB = 3V
I_C = 0
V_CB =60V
I_E = 0
V_CB =50V
I_E = 0
T_j = 100°C
V_CE =10V
I_C = 0.1mA
V_CE = 10V
I_C = 1mA
V_CE = 10V
I_C = 10mA
V_CE =10V
I_C = 50mA
V_CE = 10V
I_C = 150mA
I_C = 150mA I_B = 15mA
Base – Emitter Saturation Voltage
Collector Capactitance
I_C = 30mA
I_C = 150mA
V_CB = 10V
I_B = 1.0mA
I_B = 15mA
I_E = I_e =0
f=1.0MHz
Emitter Capactitance
V_EB = 2.0V
I_C = I_c =0
f=1.0MHz
Transistion Frequency
V_CE = 10V
f=100MHz
I_C = 50mA
T_amb = 25°C
THERMAL CHARACTERISTICS
R_{θth(j-amb)} Thermal Resistance Junction to Ambient
Min.
20
40
50
50
40
Typ.
30
1.0
1.0
0.5
0.03
90
105
125
125
90
0.15
0.77
1.05
6
18
Max.
500
100
500
50
2.0
Unit
nA
nA
µA
—
0.40 V
0.90
V
1.30
12
pF
30
100
360
MHz
292 °C/W
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Document Number 3083
Issue 2