BFX29_03 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX29
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
PNP SILICON EPITAXIAL
TRANSISTOR
APPLICATIONS
• General Purpose Industrial Applications
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO39 PACKAGE
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
60V
V_CEO
Collector – Emitter Voltage
60V
V_EBO
Emitter – Base Voltage
5V
I_C
Collector Current Continuous
600mA
I_CM
Collector Current Peak
600mA
I_EM
Emitter Current Peak
600mA
P_tot
Total Power Dissipation T_amb < 25°C
600 mW
T_stg
Storage Temperature
–65 to 200°C
T_j
Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 3083
Issue 2