BFT29 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA
IE = 0
BFT29
BFT30
BFT31
V(BR)CEO⁽¹⁾
Collector-Emitter Breakdown
Voltage
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector-Cut-Off Current
IC = 10mA
IB = 0
BFT29
BFT30
BFT31
IE = 10µA
IC = 0
VCB = Rated VCEO, IE = 0
IC = 1.0mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 10mA
VCE = 10V
BFT29
BFT30
BFT31
hFE⁽¹⁾
Forward-Current Transfer Ratio
IC = 100mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 500mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 1.0A
VCE = 10V
BFT29
BFT30
BFT31
VCE(sat)⁽¹⁾
Collector-Emitter Saturation
Voltage
VBE(sat)⁽¹⁾
Base-Emitter Saturation Voltage
IC = 500mA
IB = 50mA
IC = 1.0A
IB = 100mA
IC = 500mA
IC = 1.0A
BFT29
BFT30
BFT31
BFT29
BFT30
BFT31
IB = 50mA
IB = 100mA
Min.
90
70
60
80
60
50
5
25
45
45
30
50
50
50
75
100
30
50
50
20
25
25
Typ.
Max.
100
250
250
300
0.95
0.75
0.75
1.6
1.0
1.0
1.1
2.0
Units
V
V
V
nA
V
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 8963
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 3