BFT29 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
• Hermetic TO-18 Metal Package
• Designed For General Purpose Amplifiers, and Audio Driver
Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
BFT29 BFT30 BFT31
VCBO _{Collector – Base Voltage}
90V
70
60
VCEO
VEBO
Collector – Emitter Voltage
Emitter – Base Voltage
80V
60
50
5V
IC
Continuous Collector Current
1.0A
PD
Total Power Dissipation at ^{TA = 25°C}
360mW
Derate Above 25°C
2mW/°C
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Max
486
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8963
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