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| BFC45 Datasheet, PDF (2/2 Pages) Seme LAB – 4TH GENERATION MOSFET | |||
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SEME
LAB
DYNAMIC CHARACTERISTICS
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge3
Qgs
Gate â Source Charge
Qgd
Gate â Drain (âMillerâ) Charge
td(on)
Turnâon Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8â¦
SOURCE â DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = â ID [Cont.]
trr
Reverse Recovery Time
IS = â ID [Cont.] , dls / dt = 100A/µs
Qrr
Reverse Recovery Charge
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
Test Conditions
SOA1
Safe Operating Area
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
SOA2
Safe Operating Area
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
ILM
Inductive Current Clamped
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MILâSTDâ750 Method 3471
BFC45
Min. Typ. Max. Unit
1500 1800
235 330 pF
85 127
68 105
7.6 11 nC
33 49
13 26
15 29
ns
54 81
20 39
Min.
240
1.7
Typ.
480
3.4
Max. Unit
9.0
A
36
1.3 V
960 ns
7 µC
Min. Typ. Max. Unit
240
W
240
W
36
A
Min.
Typ.
Max. Unit
0.51
°C/W
40
CAUTION â Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
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