BFC45 Datasheet, PDF (1/2 Pages) Seme LAB – 4TH GENERATION MOSFET

SEME
LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
3.55 (0.140)
3.81 (0.150)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
BFC45
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
V_DSS
I_D(cont)
R_DS(on)
800V
9.0A
1.25Ω
Terminal 1 Gate
Terminal 3 Source
Terminal 2 Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
P_D
T_J , T_STG
Total Power Dissipation @ T_case = 25°C
Operating and Storage Junction Temperature Range
T_L
Lead Temperature : 0.063” from Case for 10 Sec.
800
V
9.0
A
36
A
±30
V
240
W
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
BV_DSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V_GS = 0V , I_D = 250µA
I_DSS
I_GSS
V_GS(TH)
Zero Gate Voltage Drain Current
(V_GS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
V_DS = V_DSS
V_DS = 0.8V_DSS , T_C = 125°C
V_GS = ±30V , V_DS = 0V
V_DS = V_GS , I_D = 1.0mA
I_D(ON)
R_DS(ON)
On State Drain Current ²
Drain – Source On State Resistance ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
V_GS = 10V , I_D = 0.5 I_D [Cont.]
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Min.
800
2
9
Typ. Max. Unit
V
250
µA
1000
±100 nA
4V
A
1.25 Ω
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 4/94