BDY26C Datasheet, PDF (2/2 Pages) Seme LAB – HIGH CURRENT NPN SILICON TRANSISTOR

BDY26C
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
PARAMETER
TestConditions
Min.
ICEO
ICES
Collector Emitter Cut–Off Current
Collector Emitter Cut–Off Current
V_CE = 180V
V_CE = 250V
VBE = 0V
I_B=0A
IEBO
Emitter Base Cut–Off Current
V_EB = 10V I_C = 0A
V(BR)CEO* Collector Emitter Breakdown Voltage _{IC = 50mA IB = 0A}
180
V(BR)CBO* Collector Base Breakdown Voltage _{IC = 3mA}
300
VCE(sat)* Collector Emitter Saturation Voltage _{IC = 2A}
I_B = 0.25A
VBE(sat)* Base Emitter Saturation Voltage
I_C = 2A
I_B = 0.25A
hFE
DC Current Gain
I_C = 1A
V_CE = 4V
I_C = 2A
V_CE = 4V
75
Typ.
Max. Unit
1.0
1.0 mA
1.0
V
0.6
1.2
90
82 180
fT
Transition Frequency
ton
Turn On Time
toff
Turn Off Time
I_C = 0.5A V_CE = 15V
10
f = 10MHz
I_C = 5A
I_C = 5A
I_B1 = 1A
IB1 = -IB2 = 1A
MHz
1
µS
6
*) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
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Document Number 6012
Issue 1