BDY26C Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT NPN SILICON TRANSISTOR

BDY26C
MECHANICAL DATA
Dimensions in mm
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
• HIGH SWITCHING CURRENTS
• HIGH RELIABILITY
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
• SWITCHING REGULATORS
• LINEAR APPLICATIONS
Pin 1 – Base
TO3 (TO-204AA)
Pin 2 – Emitter
Case – Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
Collector – Base Voltage
Collector – Emitter Voltage
300V
180V
V_EBO
Emitter – Base Voltage
10V
I_C
Collector Current
6A
I_B
Base Current
3A
P_tot
Total Dissipation at T_case = 25°C
T_stg
Storage Temperature
87.5W
–65 to +200°C
T_J
R_θJC
Maximum Operating Junction Temperature
Thermal Resistance (junction-case)
200°C
2°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 6012
Issue 1