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BDX14AA Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON TRANSISTOR, EPITAXIAL BASE
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BDX14AA
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCE = -90V VBE = +1.5V
ICEX
Collector Emitter Cut Off Current
VCE = -30V VBE = +1.5V
Tcase = 150°C
VCEO(SUS)* Collector Emitter Breakdown Voltage IC = -100mA IB = 0
-55
W VCER(SUS)* Collector Emitter Breakdown Voltage IC = -100mA RBE = 100
-60
V(BR)EBO* Emitter Base Breakdown Voltage
IE = -1A
IC =0
-7
h21E*
Static Forward Current Transfer Ratio VCE = - 4V IC = - 0.5A
25
VCE(sat)* Collector Emitter Saturation Voltage IC = - 0.5A
IB = - 0.05A
VBE*
Base Emitter Voltage
VCE = - 4V
IC = - 0.5A
fT
Transition Frequency
VCB = -10V IC = - 0.2A
4
f = 1MHz
* Pulse test tp = 300ms , d < 2%
Typ.
Max.
-1
-5
Unit
mA
V
V
250 —
-1
V
-1.7
V
MHz
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Prelim. 02/00