BDX14AA Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON TRANSISTOR, EPITAXIAL BASE

BDX14AA
MECHANICAL DATA
Dimensions in mm
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
6.35 (0.250)
8.64 (0.340)
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
FEATURES:
• LF Large Signal Power Amplification
• Medium Current Switching
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
TO66 Package.
1.27 (0.050)
1.91 (0.750)
Pin 1 – Base
Pin 2 – Emitter Case - Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (Open Emitter)
V_CEO
V_CER
Collector – Emitter Voltage (Open Base)
W Collector – Emitter Voltage R_BE =100
V_CEX
Collector – Base Voltage
V_BE = +1.5V
V_EBO
Emitter – Base Voltage
I_C
Collector Current
I_B
Base Current
P_tot
Power Dissipation
T_J
Maximum Junction Temperature
T_STG
Storage Temperature
R_th-(j-c)
Junction to Case.
- 90V
- 55V
- 60V
- 90V
-7V
-4V
-2V
29W
200°C
–65 to 200°C
6°C / W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 02/00