BDS21 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON EPIBASE PNP DARLINGTON TRANSISTOR

SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
VCB = -80V
IE = 0
ICBO
Collector-Cut-Off Current
VCB = -60V
IE = 0
TC = 150°C
ICEO
Collector-Cut-Off Current
VCE = -40V
IB = 0
IEBO
Emitter-Cut-Off Current
VEB = -5V
IC = 0
hFE⁽¹⁾
Forward-current transfer
ratio
IC = -0.5A
IC = -3A
VCE = -3V
VCE = -3V
VCE(sat)⁽¹⁾
VBE(sat)⁽¹⁾
VBE(on)⁽¹⁾
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
IC = -3A
IC = -5A
IC = -5A
IC = -3A
IB = -12mA
IB = -20mA
IB = -20mA
VCE = -3V
Min. Typ Max. Units
-0.2
1000
1000
-1.0
mA
-0.5
-2
-2
-4
V
-2.8
-3.5
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
IC = -0.5A
f = 2MHz
VCE = -4V
10.6 (0.42)
8
MHz
0.8 ^{4.6 (0.18)}
(0.03)
3.70 Dia. Nom
123
TO220M(TO-257AB)
Pin 1 – Base
Pin 2 – Collector Pin 3 - Emitter
2.54 (0.1)
BSC
1.0
(0.039)
2.70
(0.106)
Semelab Limited
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Document Number 8216
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