BDS21 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPIBASE PNP DARLINGTON TRANSISTOR

SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21
• High DC Current Gain
• Hermetic Metal TO-220 Package
• Designed For General Purpose Amplifiers and
Low Speed Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-80V
VCEO
Collector – Emitter Voltage
-80V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-5A
IB
Base Current
-0.1A
PD
Total Power Dissipation at ^{TC = 25°C}
35W
Derate Above 25°C
0.2W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
5
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8216
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