BDS18_10 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS18
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO⁽¹⁾
ICEO
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
IC = -10mA
VCE = -60V
IB = 0
IB = 0
ICBO
Collector Cut-Off Current
VCB = -120V
IE = 0
IEBO
Emitter Cut-Off Current
VEB = -5V
IC = 0
hFE⁽¹⁾
Forward-current transfer
ratio
IC = -0.5A
IC = -4A
VCE = -2V
VCE = -2V
VCE(sat)⁽¹⁾
VBE(on)⁽¹⁾
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
IC = -0.5A
IC = -4A
IC = -1.0A
IB = -0.05A
IB = -0.4A
VCE = -2V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = -0.5A
VCE = -4V
f = 5MHz
IC = -2A
VCC = -80V
IB1 = -0.2A
IC = -2A
VCC = -80V
IB1 = - IB2 = -0.2A
Min. Typ Max. Units
-120
V
-0.1
mA
-20
µA
-10
40
250
15
150
-0.4
-1.5
V
-1.4
10
MHz
0.5
µs
1.5
0.3
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