BDS18_10 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS18
• High Voltage
• Hermetic TO220 Isolated Metal Package
• Ideally suited for Power Linear, Switching
and general Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-120V
VCEO
Collector – Emitter Voltage
-120V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-8A
IB
Base Current
-2A
PD
Total Power Dissipation at ^{TC ≤ 75°C}
50W
Derate Above 75°C
0.4W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
2.5
Units
°C/W
** This datasheet supersedes document 3346
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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