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| BCU83_99 Datasheet, PDF (2/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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BCU83
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
IEBO
VCE(sat)*
VBE(sat)*
Parameter
Collector CutâOff Current
Emitter CutâOff Current
Collector â Emitter Saturation
Voltage
Base â Emitter Saturation
Voltage
hFE*
DC Current Gain
fT
Transition frequency
Cob
Output Capacitance
* Pulse test tp = 300ms , d £ 2%
Test Conditions
VCB = 50V
VEB = 5V
IE = 0
IC = 0
IC = 3A
IB = 60mA
IC = 3A
VCE = 2V
VCE = 2V
VCE = 10V
VCB = 10V
IB = 60mA
IC = 0.5A
IC = 3A
IC = 50mA
f = 1MHz
Min. Typ.
0.6
100
75
120
45
Max.
1
1
Unit.
mA
mA
0.5 V
1.5 V
560
â
MHz
pF
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim 6/99
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