BCU83_99 Datasheet, PDF (1/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

BCU83
MECHANICAL DATA
Dimensions in mm
6 .0
5 .0
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver
applications requiring
efficient low loss devices
1 .4 5 P IT C H
0 .5
TYP
EC B
TO92(EXTENDED)
FEATURES
• LOW V_CE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
APPLICATIONS
• Any High Current Driver Applications
Requiring Efficient Low Loss Devices.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO Collector – Base voltage
60V
V_CEO Collector – Emitter voltage
20V
V_EBO Emitter – Base voltage
6V
I_C
Collector current
5A
I_C(PK) Peak Collector current
8A
P_tot
Total Dissipation at T_case = 25°C
0.9W
T_stg
Storage Temperature
–55 to 150°C
T_j
Maximum Operating Junction Temperature
150°C
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim 6/99