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| BCU83D Datasheet, PDF (2/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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BCU83D
DYNAMICS CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V(BR)CEO
V(BR)CBO
Parameter
Collector â Emitter Base
Breakdown Voltage
Collector â Base
Breakdown Voltage
Test Conditions
IC = 1mA
RBE = 00
IC = 10mA
IE = 0
Min.
20
Typ.
60
V(BR)EBO Emitter Base Breakdown Voltage IE = â 10mA IC = 0
6
ICBO
Collector CutâOff Current
VCB = 50V
IE = 0
IEBO
Emitter CutâOff Current
VEB = 5V
IC = 0
hFE1*
DC Current Gain
VCE = 2V
IC = 500mA
160
hFE2*
DC Current Gain
VCE = 2V
IC = 3A
95
hFE
DC Current Gain Ratio (small/large) VCE = 2V
IC = 500mA
0.8
VCE(sat)
Collector â Emitter
SaturationVoltage
IC = 3A
IB = 60mA
220
VBE(sat)
Base â Emitter
Saturation Voltage
IC = 3A
IB = 60mA
1
fT
Gain Bandwidth Product
VCE = 10V
IC = 500mA
220
Cob
Output Capacitance
VCB = 10V
f = 1MHz
45
ton
Turn â On Time
See specified test circuit
30
tstg
Storage Time
See specified test circuit
300
tf
Fall Time
See specified test circuit
40
Max. Unit.
V
V
V
100
nA
100
560
ââ
500 mV
1.5 V
MHz
1
pF
ns
Switching Time Test Circuit
P W =20 m s
D C â¤1 %
IN P U T
50R
IB 1
IB 2
RB
VR
+
1 0 0 µF
O U TPU T
RL
5R
+
4 7 0 µF
V B E = -5 V
10IB 1 =- 10IB 2 =I C =2A
V C C =10V
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.6/99
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