BCU83D Datasheet, PDF (1/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

BCU83D
MECHANICAL DATA
Dimensions in mm
6 .2
5 .0
1 .5 1 .5
1 .0
0 .5
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal For High current Switching
Application
5
6
4
3
0 .4
2
1
0 .8
0 .8
2 .4 2 .4
1: B ase 1
2 : E m itte r 1
3 : E m itte r 2
4: B ase 2
5 : C o lle c to r 2
6 : C o lle c to r 1
0 .4
1 .8
FEATURES
• LOW V_CE(SAT)
• HIGH CURRENT CAPACITY
• FAST SWITCHING SPEED
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
Collector – Base voltage
Collector – Emitter voltage (I_B = 0)
Emitter – Base voltage
Collector current
Collector Current (Pulse)
Collector Dissipation
(Mounted on Ceramic Board (750mm² x 0.8mm)
P_T
Total Dissipation
(Mounted on Ceramic Board (750mm² x 0.8mm)
T_j
Junction Temperature
T_stg
Storage Temperature
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
60V
20V
6V
5A
8A
1A
1.5W
2W
150°C
–55 to 150°C
Prelim.6/99