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| BCU83-SMD Datasheet, PDF (2/2 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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BCU83âSMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ICBO
Collector cutâoff current
IEBO
Emitter cutâoff current
Collector â Emitter
VCE(sat)* saturation voltage
Test Conditions
VCB = 50V IE = 0
VEB = 5V IC = 0
IC = 3A
IB = 60mA
Min.
Typ.
Base â Emitter
VBE(sat)* saturation voltage
IC = 3A
IB = 60mA
0.6
hFE*
DC current gain
fT
Transition frequency
Cob
Output capacitance
VCE = 2V IC = 0.5A
100
VCE = 2V IC = 3A
75
VCE = 10V IC = 50mA
120
VCB = 10V f = 1MHz
45
* Pulse test tp = 300ms , d £ 2%
Max.
1.0
1.0
Unit.
mA
mA
0.5 V
1.5 V
560
â
MHz
pF
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 1/94
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