BCU83-SMD Datasheet, PDF (1/2 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

BCU83–SMD
MECHANICAL DATA
Dimensions in mm
4 .5
1 .6
1 .5
0 .4 0
0 .4 0
0 .5 0
1 .5
3 .0
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
• LOW V_CE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
-
+
*
SOT89
APPLICATIONS
• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CEO Collector – Emitter voltage
20V
V_CBO Collector – Base voltage
60V
V_EBO Emitter – Base voltage
6V
I_C
Collector current
5A
I_C(PK) Peak Collector current
8A
P_tot
Total Dissipation at T_case = 25°C
0.9W
T_stg
Storage Temperature
–55 to 150°C
T_j
Maximum Operating Junction Temperature
150°C
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
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