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| BCU81-SMD Datasheet, PDF (2/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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BCU81-SMD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
fT
Cob
Parameter
Collector â Emitter Base
Breakdown Voltage
Collector â Base
Breakdown Voltage
Emitter Base Breakdown Voltage
Collector CutâOff Current
Emitter CutâOff Current
DC Current Gain
Transition frequency
Output Capacitance
Test Conditions
IC = 1mA
RBE = 0
IC = 10mA
IC = 0
VCB = 20V
VBE = 4V
VCE = 2V
VCE = 10V
VCB = 10V
IE = 0
IE = 10mA
IE = 0
IC = 0
IC = 3A
IC = 50mA
f = 1MHz
Min.
10
Typ.
30
6
140
210
200
30
Max. Unit.
V
V
V
100 nA
100 nA
â
MHz
pF
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.9/98
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