BCU81-SMD Datasheet, PDF (1/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

BCU81-SMD
MECHANICAL DATA
Dimensions in mm
4 .5
1 .6
1 .5
0 .4 0
0 .4 0
0 .5 0
1 .5
3 .0
-
+
*
SOT89
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
• LOW V_CE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
APPLICATIONS
• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
V_CBO Collector – Base voltage
V_CEO Collector – Emitter voltage (I_B = 0)
V_EBO Emitter – Base voltage
I_C
Collector current
I_CP
Collector Current (Pulse)
P_C
Collector Dissipation
(Mounted on Ceramic Board (250mm² x 0.8mm)
T_j
Junction Temperature
T_stg
Storage Temperature
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
30V
10V
6V
3A
5A
500mW
1.3W
150°C
–55 to 150°C
Prelim.9/98