BC378_10 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
BC378
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
ICES
V(BR)CEO⁽¹⁾
V(BR)EBO
VBE(sat)⁽¹⁾
VCE(sat)⁽¹⁾
VBE⁽¹⁾
Collector Cut off Current
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Base-Emitter Saturation
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
VBE = 0V
IC = 2mA
IE = 10µA
IC = 500mA
IC = 500mA
IC = 100mA
VCE = 30V
IB = 0
IC = 0
IB = 50mA
IB = 50mA
VCE = 1.0V
hFE⁽¹⁾
Forward-current transfer
ratio
IC = 100mA
IC = 300mA
VCE = 1.0V
VCE = 1.0V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 50mA
Cobo
Output Capacitance
VCB = 10V
f = 1.0MHz
Cibo
Input Capacitance
VEB = 0.5V
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
VCE = 10V
IE = 0
IC = 0
Min. Typ Max. Units
15
nA
25
6
V
1.2
0.7
740
mV
75
260
-
35
100
MHz
10
pF
30
pF
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
31
2
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