BC378_10 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
BC378
• Hermetic TO-18 Metal Package
• Designed For General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCES
Collector – Emitter Voltage (VEB = 0V)
30V
VCEO
Collector – Emitter Voltage (I_B = 0)
25V
VEBO
Emitter – Base Voltage (I_C = 0)
6V
IC
Collector Current
1.0A
IB
Base Current
0.2A
PD
Total Power Dissipation at ^{TA ≤ 25°C}
375mW
TC ≤ 75°C
1.0W
TJ
Junction Temperature Range
175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
400 °C/W
100 °C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
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