2N6800_01 Datasheet, PDF (2/2 Pages) Seme LAB – N–CHANNEL ENHANCE-MENT POWER MOSFET

2N6800
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
STATIC ELECTRICAL RATINGS
BV_DSS Drain – Source Breakdown Voltage
∆BV_DSS Temperature Coefficient of
∆T_J Breakdown Voltage
Static Drain to Source
R_{DS(on) On–State Resistance}
V_GS(th) Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS Zero Gate Voltage Drain Current
I_GSS
I_GSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
V_GS = 0
I_D = 1mA
Reference to 25°C
I_D = 1mA
V_GS = 10V
I_D = 2A
V_GS = 10V
I_D = 3A
V_DS = V_GS
I_D = 250µA
V_DS ≥ 15V
I_DS = 2A
V_DS = 0.8xMax Rating
V_GS = 0
T_J = 125°C
V_GS = 20V
V_GS = –20V
400
0.37
2
2
DYNAMIC CHARACTERISTICS
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V_GS = 0
V_DS = 25V
f = 1MHz
V_GS = 10V
I_D = 3A
V_DS = Max Rating x 0.5
V_DD = 200V
I_D = 3A
V_GS = 10V
R_G = 7.5Ω
620
200
75
19.1
1
6.7
SOURCE – DRAIN DIODE CHARACTERISTICS
I_S
Continuous Source Current
I_SM
Pulse Source Current ²
V_SD Diode Forward Voltage
t_rr
Reverse Recovery TimeReverse
Q_rr
Recovery Charge
t_on
Forward Turn–On Time
I_S = 3.0A
T_J = 25°C
V_GS = 0
I_F = 3.0A
T_J = 25°C
d_i / d_t ≤ 100A/µs V_DD ≤ 50V
Negligible
PACKAGE CHARACTERISTICS
L_D
Internal Drain Inductance (from centre of drain pad to die)
5
L_S
Internal Source Inductance (from centre of source pad to end of source bond wire)
15
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Max.
1
1.15
4
25
250
100
–100
33
5.8
19.9
30
35
55
35
3
12
1.4
700
6.2
Unit
V
V/°C
Ω
V
S((^{ΩΩ)}
µA
nA
pF
nC
ns
A
V
ns
µC
nH
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Document Number 3097
Issue 1