2N6800_01 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL ENHANCE-MENT POWER MOSFET

2N6800
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
N–CHANNEL ENHANCE-
MENT
POWER MOSFET
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
BV_DSS
I_D
R_DS(on)
400V
3.0A
1.0Ω
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
45°
TO39 – Package (TO205AF)
Pin 1 – Source Pin 2 – Gate Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 10V , T_case = 25°C)
3A
I_D
Continuous Drain Current (V_GS = 10V , T_case = 100°C)
2A
I_DM
Pulsed Drain Current ¹
12A
P_D
Power Dissipation @ T_case = 25°C
25W
Linear Derating Factor
0.20W/°C
dv/dt
Peak Diode Recovery ³
4V/ns
T_J , T_stg
R_θJC
R_θJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ V_DD = 50V , L ≥ 0.100mH , R_G = 25Ω , Peak I_L = 1.5A , Starting T_J = 25°C
3) @ I_SD ≤ 1.5A , di/dt ≤ 50A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , SUGGESTED R_G = 7.5Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3097
Issue 1