2N6796_03 Datasheet, PDF (2/2 Pages) Seme LAB – TMOS FET ENHANCEMENT N - CHANNEL

2N6796
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise stated)
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
r_DS(on)
V
DS(on)
gfs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_on
t_rr
Parameter
Test Conditions
Drain–Source Breakdown Voltage
Gate Thresshold Voltage¹
Gate–Body Leakage
Zero Gate Voltage Drain Current
Drain–Source On–Resistance¹
Drain–Source On–Voltage¹
Forward Transconductance¹
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
V_GS = 0
I_D = 0.25mA
V_DS=V_GS
I_D = 0.5mA
V_DS = 0
V_GS = ±20V
V_DS = Rated V_DSS
V_GS = 0V
Tj = 125°C
V_GS = 10V I_D = 5.0A
TA = 125°C
V_GS = 10V I_D = 8.0A
V_GS = 15V I_D = 5.0A
V_DS = 25V V_GS = 0
f = 1.0MH_Z
Turn–On Delay Time¹
RiseTime¹
Turn off Delay Time¹
FallTime¹
V_DD = 30V RGEN = 50Ω
I_D = 5.0A
R_G = 7.5 ohms
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Diode Forward Voltage¹
Forward Turn OnTime¹
Reverse Recovery Time¹
I_S = Rated ID(on)
V_GS = 0
Min.
100
2.0
3.0
350
150
50
Typ.
Max. Unit
4.0
±100
250
1000
0.18
0.35
1.56
9.0
900
500
150
30
75
40
45
V
nA
µA
Ω
V
s( ^Ω)
pF
ns
5.5
V
Negligible
300 ^ns
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
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Document Number 3095
Issue 1