2N6796_03 Datasheet, PDF (1/2 Pages) Seme LAB – TMOS FET ENHANCEMENT N - CHANNEL

2N6796
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
1
3
2.54
(0.100)
45°
TO–39 PACKAGE (TO-205AF)
Underside View
PIN 1 – Source PIN 2 – Gate
PIN 3 – Drain
TMOS FET
ENHANCEMENT
N - CHANNEL
FEATURES
• V_(BR)DSS = 100V
• I_D = 8A
• R_DSON = 0.18Ω
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
V_DGR
V_GS
I_D
I_DM
P_D
Drain–Source Voltage
Drain–Source Voltage (RGS = 1.0 mΩ)
Gate–Source Voltage
Drain Current Continuous T_Case = 25°C
Drain Current Pulsed
Total Device Dissipation @ T_Case = 25°C
Derate above 25°C
100V
100V
±20V
8.0A
32A
25W
0.2W/°C
T_J , T_STG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
–55 to +150°C
R_θJC
R_θJA
T_L
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.6mm from Case for 10 secs.
5.0°C/W
175°C/W
300°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3095
Issue 1