2N6315 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7.0A,90W)

2N6315
2N6317
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
OFF CHARACTERISTICS
Collector – Emitter Sustaining
V_{CEO(sus) Voltage *}
I_C = 100mA
I_B = 0
60
I_CEO
I_CEX
I_CBO
Collector Cut–off Current
Collector Cut–off Current
Collector Cut–off Current
V_CE = 30V
V_CE = 60V
V_CB = 60V
I_B = 0
V_BE(off) = 1.5V
T_C = 150°C
I_E = 0
I_EBO
Emitter Cut–off Current
V_EB = 5V
I_C = 0
ON CHARACTERISTICS ^*
V_CE = 4V
I_C = 0.5A
35
h_FE
DC Current Gain
V_CE = 4V
I_C = 2.5A
20
V_CE = 4V
I_C = 7.0A
4
V_CE(sat) Collector – Emitter Saturation
I_C = 4A
I_B = 0.4A
Voltage
I_C = 7A
I_B = 1.75A
V_BE(sat) Base – Emitter Saturation Voltage I_C = 7A
I_B = 1.75A
V_BE(on) Base – Emitter On Voltage
V_CE = 4V
I_C = 2.5A
DYNAMIC CHARACTERISTICS
C_ob
Output Capacitance
V_CB = 10V
f = 1MHz
I_E = 0
V_CE = 10V
fT
Current Gain – Bandwidth Product I_C = 0.25A
4.0
f = 1MHz
h_fe
Small Signal Current Gain
V_CE = 4V
I_C = 0.5A
20
f = 1kHz
DYNAMIC CHARACTERISTICS
tr
Rise Time
ts
Storage Time
tf
Fall Time
V_CC = 30V
I_C = 2.5A
I_B1 = I_B =0.25A
Notes
*Pulse _{test: tp = 300µs , Duty Cycle = 2%}
Typ.
Max. Unit
V
0.5
0.25
2.0
mA
0.25
1.0
100 —
1.0
2.0
V
2.5
1.5
300 pF
MHz
—
0.7
1.0 µS
0.8
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Document Number 5353
Issue 1