2N6315 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7.0A,90W)

MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
2N6315
2N6317
6.35 (0.250)
8.64 (0.340)
COMPLEMENTARY SILICON
MEDIUM POWER TRANSISTORS
COMPLEMENTARY TRANSISTORS
2N6315 (NPN) AND 2N6317 (PNP)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Pin 1 –Base
TO–66 (TO-213AA)
Pin 2 –Emitter
Case – Collector
FEATURES
• Low Collector Emitter Saturation Voltage
• Low Leakage Current
• Excellent DC Current Gain
APPLICATIONS:
Designed for general purpose amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated)
V_CEO
Collector – Emitter Voltage
V_CBO
Collector – Base Voltage
V_EBO
Emitter – Base Voltage
I_C
Collector Current
Continuous
Peak
I_B
Base Current
P_D
Total Dissipation @ T_C = 25°C
Derate above 25°C
T_STG , T_J
R_θJC
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
60V
60V
5V
7A
15A
2A
90W
0.515W/°C
–65 to +200°C
1.94°C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5353
Issue 1