2N6059_10 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6059
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
ICEO
ICEX
IEBO
V(BR)CEO⁽¹⁾
VBE
Collector-Emitter Cut-Off
Current
Collector=Emitter Cut-Off
Current
Emitter-Base Cut-Off
Current
Collector-Emitter
Breakdown Voltage
Base-Emitter Voltage
(nonsaturated)
VCE = 50V
VCE = 100V
VEB = 5V
IC = 100mA
IC = 6A
VBE = 1.5V
TC = 150°C
VCE = 3V
VBE(sat)⁽¹⁾
Base-Emitter Saturation
Voltage
IC = 12A
IB = 120mA
VCE(sat)⁽¹⁾
Collector-Emitter Saturation
Voltage
IC = 12A
IC = 6A
IB = 120mA
IB = 24mA
TC = 150°C
hFE⁽¹⁾
Forward-Current Transfer
Ratio
IC = 1.0A
IC = 6A
IC = 12A
VCE = 3V
VCE = 3V
TC = -55°C
VCE = 3V
DYNAMIC CHARACTERISTICS
Magnitude of Common-
|hfe|
Emitter Small Signal
Forward Current Transfer
Ratio
hfe
Small Signal Forward-
Current Transfer Ratio
Cobo
Output Capacitance
ton
Turn-On Time
toff
Turn-Off Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = 5A
f = 1.0MHz
IC = 5A
f = 1.0kHz
f = 1.0MHz
IE = 0
IC = 5A
IB = 20mA
IC = 5A
IB = 20mA
VCE = 3V
VCE = 3V
VCB = 10V
VCC = 30V
VCC = 30V
Min. Typ Max. Units
1.0
mA
10
µA
5
mA
2
mA
100
2.8
1000
1000
300
150
4
V
3
2
2
18000
10
1000
250
300
pF
2
µs
10
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