2N6059_10 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6059
• High Current Capability.
• Hermetic TO3 Metal package.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
100V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
12A
IB
Base Current
0.2A
PD
Total Power Dissipation at ^{TC = 25°C}
150W
Derate Above 25°C
1.00W/°C
TJ
Junction Temperature Range
-55 to +175°C
Tstg
Storage Temperature Range
-55 to +175°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
1.00 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8812
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