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| 2N5885 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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2N5885
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Breakdown
VCEO(BR)* Voltage
IC = 200mA
60
VBE*
ICEV
IEBO
ICEO
ICBO
VCE(sat)*
VBE(sat)*
Base â Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector â Emitter Saturation
Voltage
Base â Emitter
Saturation Voltage
IC = 10A
VCE = 60V
VEB = 5V
VCE = 30V
VCE = 60V
IC = 15A
IC = 25A
IC = 25A
VCE = 4V
VBE = â1.5V
TCASE =150°C
IC = 0
IB = 0
IE = 0
IB = 1.5A
IB = 6.25A
IB = 6.25A
hFE*
DC Current Gain
IC = 3A
IC = 10A
VCE = 4V
35
VCE = 4V
20
IC = 25A
VCE = 4V
4
hfe
Small Signal Current Gain
IC = 3A VCE = 4V f = 1 KHz
20
Ccbo
Collector Base Capacitance IE = 0 VCB = 10V f = 1 MHz
fT
Transition Frequency
IC = 1.0A VCB = 10V f = 1 MHz
4
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30V
IB1 = - IB2 = 1.0A
IC = 10A
Typ.
Max. Unit
V
1.5
V
1.0
mA
10
1.0 mA
2
mA
1.0 mA
1.0
V
4
2.5
V
100 â
â
500 pF
MHz
0.7
1.0
µs
0.8
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance Junction to Case
* Pulse test tp = 300µs , δ = 1.5 %
Max
0.875
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6366
Issue 1
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