2N5885 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

2N5885
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–3(TO204AA)
PIN 1 — Base PIN 2 — Emitter
.
Case is Collector
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
FEATURES
• HIGH VOLTAGE
• LOW SATURATION VOLTAGES
• HIGH RELIABILITY
APPLICATIONS
• POWER SWITCHING CIRCUITS
• LINEAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (I_E = 0)
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_C
Collector Current
I_CM
Peak Collector Current
I_B
Base Current
P_tot
Total Power Dissipation at T_case ≤ 25°C
T_stg,
Storage Temperature
T_j
Junction Temperature
60V
60V
5V
25A
50A
7.5A
200W
–65 to 200°C
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 6366
Issue 1