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2N5784_02 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR
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2N5784
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICER
Collector Cut-off Current
VCE = 65V
RBE = 100Ω
TC = 150°C
ICEX
Collector Cut-off Current
VCE = 75V
RBE = 100Ω
VBE = -1.5V
TC = 150°C
ICEO
Collector Cut-off Current
VCE = 50V
IB = 0
IEBO
Emitter Cut-off Current
VBE = -5V
IC = 0
hFE*
DC Current Gain
VCE = 2V
VCE = 2V
IC = 1A
20
IC = 3.2A
4
VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA
IB = 0
65
VCER(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA
RBE = 100Ω 80
VBE
Base – Emitter Voltage
VCE = 2V
IC = 1A
VCE(sat) Collector – Emitter Saturation Voltage 2 IC = 1A
IB = 100mA
hfe
Small Signal Common – Emitter
Current Gain
VCE = -2V
f = 200kHz
IC = 100mA
5
hfe
Small Signal Common – Emitter
VCE = 2V
IC = 100mA
25
Current Gain
f = 1kHz
tON
tOFF
RθJC
RθJA
Turn-on Time
Turn-off Time
Thermal Resistance Junction – Case
VCE = 30V
IC = 1A
IB1 = IB2 = 100mA
Thermal Resistance Junction – Ambient
NOTES
* Pulse Test: tp = 300µs, δ = 1.8%.
1) These tests MUST NOT be measured on a curve tracer.
2) Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test.
3) Measured at a frequency where hfe is decreasing at approximately 6dB per octave.
Typ.
Max. Unit
10
µA
1 mA
10 µA
1 mA
100 µA
10 µA
100
—
V
1.5
V
0.5
20 —
—
5
µs
15
17.5
°C/W
17.5
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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Document Number 3078
Issue 1