2N5784_02 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5784
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
SILICON EPITAXIAL
NPN TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
TO–39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
V_CER(sus)
V_CEO(sus)
V_EBO
I_C
I_B
P_D
Collector – Base Voltage
Collector – Emitter Sustaining Voltage R_BE = 100Ω
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Collector Current
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
Total Device Dissipation
T_C = 25°C
Derate above 25°C
T_J , T_STG
T_L
Operating Junction and Storage Temperature Range
Lead temperature, ≥ ¹/₃₂” (0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3078
Issue 1