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| 2N5662 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor | |||
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2N5662
2N5663
ELECTRICAL CHARACTERISTICS - 2N5666 (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CEO* Collector â Emitter
2N5662 IC = 10mA
200
Breakdown Voltage
2N5663
300
V(BR)EBO Emitter â Base Breakdown Voltage
IE = 10µA
6.0
ICES
Collector â Emitter Cut-off Current (IB = 0) VCE1 = 200V VCE2 = 300V
ICBO
Collector â Base Cut-off Current
VCB1 = 200V VCB2 = 300V
VCB1 = 250V VCB2 = 400V
VCE(sat)*
Collector â Emitter Saturation Voltage IC = 1.0A
IC = 2.0A
IB = 0.1A
IB = 0.4A
VBE(sat)* Base â Emitter On Voltage
IC = 1.0A
IC = 2.0A
IB = 0.1A
IB = 0.4A
2N5662 IC = 50mA VCE = 2V
40
2N5663 IC = 50mA VCE = 2V
25
hFE*
DC Current Gain
2N5662 IC = 0.5A
VCE = 5V
40
2N5663 IC = 0.5A
VCE = 5V
25
Both IC = 1.0A
VCE = 5V
15
Both IC = 2.0A
VCE = 5V
5.0
Cobo
Output Capacitance
VCB = 10V IE = 0A
100kHz < f < 1MHz
[hfe]
Small Signal Current Gain
f = 10MHz
2.0
IC = 0.1A
VCE = 5V
ton
Turn on time
IB11 = 15mA
IC = 0.5A
IB12 = 25mA
VCC = 100V
toff
Turn off time
2N5662 IB11 = -IB2 = 15mA
2N5663 IB12 = -IB2 = 25mA
IC = 0.5A
VCC = 100V
NOTES
* Pulse Test: tp = 300µs, δ ⤠2%
1) Value for the 2N5662
2) Value for the 2N5663
Typ.
Max. Unit
V
0.2
µA
0.1
µA
1.0 mA
0.4
0.8
V
1.2
1.5
120 â
75
45
pF
7.0
â
0.25
0.85 µs
1.2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5384
Issue 1
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