2N5662 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N5662
2N5663
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
NPN BIPOLAR
POWER SWITCHING
TRANSISTORS
38.00
(1.5)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
FEATURES
• FAST SWITCHING
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
45°
TO-5 (TO-205AA)
APPLICATIONS
• HIGH SPEED SWITCHING CIRCUITS
• POWER AMPLIFIERS
1 = Emitter
Underside View
2 = Base
3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_B
Base Current
I_C
Collector Current
P_D
Power Dissipation @ TC = 25°C
P_D
Power Dissipation @ TA = 25°C
R_θJC
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
T_J , T_STG
Operating and Storage Junction Temperature Range
2N5662
2N5663
250V
400V
200V
300V
6V
0.5A
2.0A
35W
26W
2.0W
1.0W
5.0°C/W
6.67°C/W
87.5°C/W 175.4°C/W
–65 to +200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5384
Issue 1