2N5415CSM4 Datasheet, PDF (2/2 Pages) Seme LAB – PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N5415CSM4
2N5416CSM4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
I_CBO
Collector Cut Off Current (V_E =0)
V_CB = -175V
V_CB = -280V
2N5415
2N5416
I_CEO
I_EBO
Emitter Cut Off Current (I_B =0)
Emitter Cut Off Current (I_C =0)
V_CE = -150V
V_EB = -4V
V_EB = -6V
2N5415
2N5416
V_{CEO(sus)* Collector Emitter on Voltage(IB =0)}
I_C = -10mA
I_C = -10mA
V_{CER(sus)* Collector Emitter Breakdown Voltage} I_C = -50mA
W R_BE=50
2N5415
2N5416
2N5416
V_{CE(sat) Collector Base Breakdown Voltage} I_C = -50mA I_B =-5mA
V_BE*
Base-Emitter Voltage
I_C = -50mA V_CE = -10V
h_FE*
DC Current Gain
I_C = -50mA V_CE =-10V 2N5415
I_C = -50mA V_CE =-10V 2N5416
h_fe
Small Signal Current Gain
I_C = -5mA V_CE = -10V
f = 1KHz
-200
-300
-350
30
30
25
C_cbo
Collector-Base Capacitance
I_E = 0
f = 1MHz
V_CB = -10V
f_T
Transition Frequency
I_C = -10mA V_CE = -10V
15
f = 5MHz
m *Pulsed: duration = 300 s, duty cycle 1.5%
Typ.
Max.
-50
-50
-50
-20
-20
-0.5
-1.5
150
120
Unit
mA
mA
mA
V
V
V
V
V
—
—
25
pF
MHz
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Prelim. 02/00