2N5415CSM4 Datasheet, PDF (1/2 Pages) Seme LAB – PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N5415CSM4
2N5416CSM4
MECHANICAL DATA
Dimensions in mm (inches)
PNP PLANAR EPITAXIAL TRANSISTOR
IN A HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
5.59 ± 0.13
(0.22 ± 0.005)
3
2
4
1
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
rad.
0.23
(0.009)
min.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
FEATURES
• Silicon Planar PNP Transistor
• Hermetic Ceramic Surface Mount Package
• CECC Screening Options
• Space quality Options
LCC3 PACKAGE
Underside View
PAD 1 – Collector
PAD 2 – N/C
PAD 3 – Emitter
PAD 4 – Base
ABSOLUTE MAXIMUM RATINGS T_case = 25°c unless otherwise stated
V_CBO
Collector – Base Voltage (I_E=0)
V_CEO(sus)
Collector – Emitter Voltage (I_B=0)
V_EBO
Emitter – Base Voltage (I_C=0)
I_C
Collector Current
I_B
P_tot
Base Current
£ Total Device Dissipation at T_A 25°C
T_stg
Storage Temperature
T_J
R_th-j-amb
Junction Temperature
Thermal Resistance Junction - Ambient
2N5415
2N5416
-200V
-350V
-200V
-300V
-4V
-6V
1A
0.5A
1W
–65 to +200°C
175°C
150°C/W
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Prelim. 02/00