2N5154N2A_11 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
2N5154N2A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO⁽²⁾
ICES
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
IC = 10mA
VCE = 60V
VCE = 100V
VBE = 0
VBE = 0
ICEX
Collector Cut-Off Current
VCE = 60V
VBE = -2V
TC = 150°C
ICEO
Collector Cut-Off Current
VCE = 60V
IB = 0
IEBO
Emitter Cut-Off Current
VEB = 4V
VEB = 5.5V
IC = 0
IC = 0
IC = 50mA
VCE = 5V
hFE⁽²⁾
Forward-current transfer
ratio
IC = 2.5A
VCE = 5V
TC = -55°C
VBE⁽²⁾
Base-Emitter Voltage
IC = 5A
IC = 2.5 A
VCE = 5V
VCE = 5V
VBE(sat)⁽²⁾
Collector-Emitter Saturation
Voltage
IC = 2.5A
IC = 5A
IB = 250mA
IB = 500mA
VCE(sat)⁽²⁾
Base-Emitter Saturation
Voltage
IC = 2.5A
IC = 5A
IB = 250mA
IB = 500mA
DYNAMIC CHARACTERISTICS
 ^hfe
Magnitude of common-
emitter, small-signal short-
circuit, forward-current
transfer ratio
hfe
Small-Signal Current Gain
Cobo
ton
ts
tf
toff
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Turn-Off Time
IC = 500mA
f = 20MHz
IC = 100mA
f = 1.0 KHz
VCB = 10V
f = 1.0MHz
VCC = 30V
IB1 = 500mA
VCE = 5V
VCE = 5V
IE = 0
IC = 5A
IB2 = - IB1
RL = 6Ω
Notes
(2)
Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ Max. Units
80
V
1.0
µA
1.0
mA
25
µA
50
1.0
1.0
mA
50
70
200
-
25
40
1.45
1.45
2.2
V
0.75
1.5
1.2
-
50
-
250
pF
0.5
1.4
µS
0.5
1.5
Semelab Limited
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Document Number 9081
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Issue 2
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