2N5154N2A_11 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
2N5154N2A
• Hermetic Ceramic Surface Mount SMD1 Package
• High Reliability and Space Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
100V
VCEO
Collector – Emitter Voltage (IB = 0)
80V
VEBO
Emitter – Base Voltage
5.5V
IC
Continuous Collector Current
2A
ICM
Peak Collector Current ⁽¹⁾
10A
PD
Total Power Dissipation at ^{TC = 25°C}
70W
Derate Above 25°C
400 mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case (TC = 25°C)
Min. Typ. Max. Units
2.5 °C/W
(1)
This value applies for Pw ≤ 8.3ms, duty cycle ≤ 1%.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 9081
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Issue 2
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